IRLL2705TRPBF vs IRFL024ZTRPBF Comparison

Detailed side-by-side comparison of IRLL2705TRPBF by Infineon and IRFL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLL2705TRPBF IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRLL2705TRPBF βœ“ Active
Infineon
IRFL024ZTRPBF IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF βœ“ Active

Specification Comparison

Parameter IRLL2705TRPBF IRFL024ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.22 $0.26
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Technology HEXFET (IR MOSFET fifth generation) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at 25 deg C 3.8 A β€”
Peak Drain Current (IDM, pulsed) 5.2 A β€”
RDS(on) max at VGS=10V 40 mOhm β€”
Total Gate Charge (Qg) 32 nC β€”
Gate Drive Level Logic-Level β€”
Power Dissipation at TA=25 deg C 1 W (Ta), 2.1 W (per LCSC listing) β€”
Operating Temperature Range -55 deg C to +175 deg C -55C to +150C
Mounting Type Surface Mount Surface Mount
Package SOT-223 SOT-223
Dynamic dv/dt Rating Yes β€”
Lead-Free Yes (PBF suffix) Yes
RoHS Status Compliant Compliant
Drain-Source Voltage (Vds) β€” 55 V
Continuous Drain Current (Id) at Ta=25C β€” 5.1 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Rds(on) Max at Vgs=10V β€” 57.5 mOhm
Gate Charge (Qg) Typ β€” 9.1 nC
Gate-Source Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th)]
Power Dissipation (Pd) at Ta=25C β€” 1 W
Pin Count β€” 3 (+ drain tab)
MSL Level β€” 1

Datasheets & Resources

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