IRLML6246TRPBF vs IRLML2030TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML6246TRPBF disebabkan oleh Infineon dan IRLML2030TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML6246TRPBF IRLML2030TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRLML6246TRPBF IRLML2030TRPBF
Technology IR MOSFET (HEXFET Power MOSFET) HEXFET (IR MOSFET)
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm 154 mOhm
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Gambaran Suhu Operasi -55C to +150C (junction) —
Kemasan SOT-23 (Micro3) Micro3 (SOT-23)
Jenis Pemasangan Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) Yes (lead-free, halogen-free)
Boson Bebas Yes —
Aras MSL MSL1 (per JEDEC J-STD-020) MSL 1
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 2.7 A
Power Dissipation (PD) at Ta — 1.3 W
On-Resistance RDS(on) max @ VGS=10V — 100 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Charge (Qg) typ — 1.0 nC
Suhu Operasi — -55C to +150C (junction)
Qualification — JEDEC standard
Soldering — Wave-solder compatible

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