IRLML6246TRPBF vs IRLML2030TRPBF Perbandingan

Perbandingan bersamaan detil IRLML6246TRPBF dari Infineon dan IRLML2030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6246TRPBF IRLML2030TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRLML6246TRPBF IRLML2030TRPBF
Technology IR MOSFET (HEXFET Power MOSFET) HEXFET (IR MOSFET)
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm 154 mOhm
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Rentang Suhu Kerja -55C to +150C (junction) —
Paket SOT-23 (Micro3) Micro3 (SOT-23)
Tipe Mounting Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) Yes (lead-free, halogen-free)
Bebas Halogen Yes —
Level MSL MSL1 (per JEDEC J-STD-020) MSL 1
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 2.7 A
Power Dissipation (PD) at Ta — 1.3 W
On-Resistance RDS(on) max @ VGS=10V — 100 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Charge (Qg) typ — 1.0 nC
Suhu Kerja — -55C to +150C (junction)
Qualification — JEDEC standard
Soldering — Wave-solder compatible

Spek dan Sumber

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