IRLML6246TRPBF vs IRLML2803TRPBF 比較

詳細並排比較 IRLML6246TRPBF 由 Infineon 與 IRLML2803TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML6246TRPBF IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF ✓ 啟用中
Infineon
IRLML2803TRPBF IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2803TRPBF ✓ 啟用中

規格比較

參數 IRLML6246TRPBF IRLML2803TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRLML6246TRPBF IRLML2803TRPBF
Technology IR MOSFET (HEXFET Power MOSFET) IR MOSFET Generation V
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm —
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
工作溫度範圍 -55C to +150C (junction) -55C to +150C (TJ)
封裝 SOT-23 (Micro3) Micro3 / SOT-23 (3-pin)
安裝類型 Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) Compliant, Halogen-Free
無鹵素 Yes —
MSL 等級 MSL1 (per JEDEC J-STD-020) 1
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.2 A
On-Resistance RDS(on) at VGS=4.5V — 250 mOhm maximum
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) — 3.3 nC typical
Power Dissipation (PD) at TA=25C — 540 mW
Gate Drive Level — Logic-level (driven from 3.3V / 5V)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價