IRLML6246TRPBF vs IRLML2803TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML6246TRPBF disebabkan oleh Infineon dan IRLML2803TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML6246TRPBF IRLML2803TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRLML6246TRPBF IRLML2803TRPBF
Technology IR MOSFET (HEXFET Power MOSFET) IR MOSFET Generation V
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm —
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (TJ)
Kemasan SOT-23 (Micro3) Micro3 / SOT-23 (3-pin)
Jenis Pemasangan Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) Compliant, Halogen-Free
Boson Bebas Yes —
Aras MSL MSL1 (per JEDEC J-STD-020) 1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.2 A
On-Resistance RDS(on) at VGS=4.5V — 250 mOhm maximum
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) — 3.3 nC typical
Power Dissipation (PD) at TA=25C — 540 mW
Gate Drive Level — Logic-level (driven from 3.3V / 5V)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga