IRLR024NTRPBF vs IRLR3105TRPBF Comparison
Detailed side-by-side comparison of IRLR024NTRPBF by Infineon and IRLR3105TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR024NTRPBF | IRLR3105TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 13.3 nC |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| Operating Temperature Range | -55 C to +175 C | [DATA_NEEDED: TJ min/max] |
| Mounting Type | Surface Mount | Surface Mount |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK, 2 leads + tab) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET (IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Rds(on) max @ VGS=10V | — | 37 mOhm |
| Rds(on) max @ VGS=5V | — | [DATA_NEEDED: Rds(on) at 5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Input Capacitance (Ciss) | — | 710 pF @ 25 V |
| Power Dissipation (Pd) at Tc | — | 57 W |
| Gate Drive Type | — | Logic-Level |
| RoHS Status | — | Compliant |
| Packaging | — | Tape & Reel (TRPBF) |
| Supplier Device Package | — | TO-252AA (DPAK) |