IRLR024NTRPBF vs IRLR3105TRPBF 比較
詳細並排比較 IRLR024NTRPBF 由 Infineon 與 IRLR3105TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR024NTRPBF | IRLR3105TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 13.3 nC |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| 工作溫度範圍 | -55 C to +175 C | [DATA_NEEDED: TJ min/max] |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK, 2 leads + tab) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET (IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Rds(on) max @ VGS=10V | — | 37 mOhm |
| Rds(on) max @ VGS=5V | — | [DATA_NEEDED: Rds(on) at 5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Input Capacitance (Ciss) | — | 710 pF @ 25 V |
| Power Dissipation (Pd) at Tc | — | 57 W |
| Gate Drive Type | — | Logic-Level |
| RoHS 狀態 | — | Compliant |
| Packaging | — | Tape & Reel (TRPBF) |
| Supplier Device Package | — | TO-252AA (DPAK) |