IRLR024NTRPBF vs IRLR3105TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR024NTRPBF disebabkan oleh Infineon dan IRLR3105TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR024NTRPBF | IRLR3105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 13.3 nC |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C | [DATA_NEEDED: TJ min/max] |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK, 2 leads + tab) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET (IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Rds(on) max @ VGS=10V | — | 37 mOhm |
| Rds(on) max @ VGS=5V | — | [DATA_NEEDED: Rds(on) at 5V] |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Input Capacitance (Ciss) | — | 710 pF @ 25 V |
| Power Dissipation (Pd) at Tc | — | 57 W |
| Gate Drive Type | — | Logic-Level |
| Status RoHS | — | Compliant |
| Packaging | — | Tape & Reel (TRPBF) |
| Supplier Device Package | — | TO-252AA (DPAK) |