IRLR2905TRPBF vs IRFR1205TRPBF Comparison

Detailed side-by-side comparison of IRLR2905TRPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF βœ“ Active

Specification Comparison

Parameter IRLR2905TRPBF IRFR1205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.49
FET Type N-Channel MOSFET N-Channel
Technology HEXFET (IR MOSFET, fifth generation) HEXFET (IR MOSFET, 5th generation)
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] 160 A
On-Resistance RDS(on) max @ VGS=10V 27 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 2 V min, 4 V max
Gate Charge (Qg) 32 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Avalanche Rated Yes β€”
Lead-Free / RoHS Yes / Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Gate Drive Logic-level compatible β€”
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC=25C β€” 44 A
Gate-Source Voltage (VGS) max β€” +/- 20 V
On-Resistance RDS(on) at VGS=10V β€” 27 mOhm max
Total Gate Charge (Qg) β€” 43.3 nC
Power Dissition (PD) at TC=25C β€” 107 W
RoHS Status β€” Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free β€” Yes / [DATA_NEEDED: halogen status]

Datasheets & Resources

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