IRLR2905TRPBF vs IRFR1205TRPBF 比較

詳細並排比較 IRLR2905TRPBF 由 Infineon 與 IRFR1205TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF ✓ 啟用中

規格比較

參數 IRLR2905TRPBF IRFR1205TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET N-Channel
Technology HEXFET (IR MOSFET, fifth generation) HEXFET (IR MOSFET, 5th generation)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] 160 A
On-Resistance RDS(on) max @ VGS=10V 27 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 2 V min, 4 V max
Gate Charge (Qg) 32 nC —
Power Dissipation (PD) at Tc=25C 110 W —
工作接面溫度 -55C to +175C -55C to +175C
封裝 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Avalanche Rated Yes —
Lead-Free / RoHS Yes / Compliant —
MSL 等級 [DATA_NEEDED: MSL rating] —
Gate Drive Logic-level compatible —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 44 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
RoHS 狀態 — Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價