IRLR2908TRPBF vs IRLR3114ZTRPBF Perbandingan
Perbandingan bersamaan detil IRLR2908TRPBF dari Infineon dan IRLR3114ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR2908TRPBF | IRLR3114ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulsed value] | — |
| On-Resistance RDS(on) max @ Vgs=10V | 28 mOhm | — |
| On-Resistance RDS(on) typ @ Vgs=10V | 22.5 mOhm | — |
| Gate Charge (Qg) typ | 22 nC | — |
| Power Dissipation (Pd) at Tc=25C | 120 W | — |
| Suhu Hubung Kerja | -55C to +175C | -55 C to +175 C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) range] | — |
| Paket | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | — | 30 A |
| Pulsed Drain Current (IDM) | — | 130 A |
| Gate-Source Voltage (VGS) max | — | 16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V (typ) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | — | 4.9 mOhm |
| Total Gate Charge (Qg) | — | 40 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | — | 140 W |
| Jumlah Pin | — | 3 (2 + tab) |
| Status RoHS | — | Compliant |