IRLR2908TRPBF vs IRLR3114ZTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2908TRPBF disebabkan oleh Infineon dan IRLR3114ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR2908TRPBF | IRLR3114ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulsed value] | — |
| On-Resistance RDS(on) max @ Vgs=10V | 28 mOhm | — |
| On-Resistance RDS(on) typ @ Vgs=10V | 22.5 mOhm | — |
| Gate Charge (Qg) typ | 22 nC | — |
| Power Dissipation (Pd) at Tc=25C | 120 W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55 C to +175 C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) range] | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | — | 30 A |
| Pulsed Drain Current (IDM) | — | 130 A |
| Gate-Source Voltage (VGS) max | — | 16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V (typ) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | — | 4.9 mOhm |
| Total Gate Charge (Qg) | — | 40 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | — | 140 W |
| Bilangan Pin | — | 3 (2 + tab) |
| Status RoHS | — | Compliant |