IRLR2908TRPBF vs IRLR3114ZTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR2908TRPBF sa pamamagitan ng Infineon at IRLR3114ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLR2908TRPBF IRLR3114ZTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulsed value] —
On-Resistance RDS(on) max @ Vgs=10V 28 mOhm —
On-Resistance RDS(on) typ @ Vgs=10V 22.5 mOhm —
Gate Charge (Qg) typ 22 nC —
Power Dissipation (Pd) at Tc=25C 120 W —
Temperature ng Junction na Operasyon -55C to +175C -55 C to +175 C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) range] —
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single with built-in diode —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25 C) — 42 A
Continuous Drain Current (ID, Tc=100 C) — 30 A
Pulsed Drain Current (IDM) — 130 A
Gate-Source Voltage (VGS) max — 16 V
Gate Threshold Voltage (VGS(th)) — 2.5 V (typ)
On-Resistance RDS(on) max @ VGS=10V — 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V — 4.9 mOhm
Total Gate Charge (Qg) — 40 nC @ VGS=4.5 V
Input Capacitance (Ciss) — 3.81 nF
Power Dissipation (Pd, Tc=25 C) — 140 W
Bilang ng Pins — 3 (2 + tab)
Tindminan RoHS — Compliant

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