IRLR3110ZTRPBF vs IRFR4615TRLPBF Perbandingan

Perbandingan bersamaan detil IRLR3110ZTRPBF dari Infineon dan IRFR4615TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRLR3110ZTRPBF IRFR4615TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 42 A 33 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V 14 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 15 nC 26 nC
Power Dissipation (PD) at TC=25C 140 W 144 W
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET / Trench MOSFET IR MOSFET (N-Channel Enhancement Mode)
Level MSL 1 (Unlimited) —
Status RoHS Compliant —
Lead-Free Plating Yes (PBF suffix) —
Bebas Halogen Yes —
Drain-Source Voltage (VDS) — 150 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Avalanche Energy (EAS) — 109 mJ
Rentang Suhu Kerja — -55C to +175C
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
Energi Pulsa Tandai — 109 mJ

Spek dan Sumber

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