IRLR3410TRRPBF vs IRLR3410TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRRPBF disebabkan oleh Infineon dan IRLR3410TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3410TRRPBF | IRLR3410TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 17 A | — |
| Power Dissipation (PD, Tc=25C) | 79 W | — |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) | HEXFET (5th generation) N-Channel MOSFET |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount (tape and reel) |
| Packaging Style | Tape & Reel Right (TRR) | — |
| Avalanche Rated | Yes | Yes (UIS tested) |
| Gambaran Suhu Operasi | -55C to +175C (junction) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |