IRLZ44NPBF vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of IRLZ44NPBF by Infineon and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLZ44NPBF IRFZ44NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.65
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25Β°C 47 A β€”
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) Max Β±16 V β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (typ 1.5 V) β€”
Static Drain-to-Source On-Resistance (RDS(on)) 22 mΞ© max at VGS=5V, ID=25A β€”
Total Gate Charge (Qg) 32 nC 42 nC
Power Dissipation (PD) at TC=25Β°C 110 W β€”
Power Dissipation (PD) at TA=25Β°C 3.8 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55C to +175C
Thermal Resistance Junction-to-Case (RΞΈJC) 1.4 Β°C/W β€”
Package TO-220AB (through-hole, 3 leads) TO-220AB (3-pin + tab)
Mounting Type Through Hole Through Hole
Technology HEXFET (advanced process) HEXFET (Advanced Process)
Logic-Level Gate Drive Yes (fully enhanced at VGS=5V) β€”
RoHS Status Compliant Compliant
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 17.5 mOhm
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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