IRLZ44NPBF vs IRFZ44NPBF Perbandingan
Perbandingan bersamaan detil IRLZ44NPBF dari Infineon dan IRFZ44NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLZ44NPBF | IRFZ44NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) Max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΩ max at VGS=5V, ID=25A | — |
| Total Gate Charge (Qg) | 32 nC | 42 nC |
| Power Dissipation (PD) at TC=25°C | 110 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.4 °C/W | — |
| Paket | TO-220AB (through-hole, 3 leads) | TO-220AB (3-pin + tab) |
| Tipe Mounting | Through Hole | Through Hole |
| Technology | HEXFET (advanced process) | HEXFET (Advanced Process) |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | — |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |