IRLZ44NPBF vs IRFZ44NPBF 比較
詳細並排比較 IRLZ44NPBF 由 Infineon 與 IRFZ44NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLZ44NPBF | IRFZ44NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) Max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΩ max at VGS=5V, ID=25A | — |
| Total Gate Charge (Qg) | 32 nC | 42 nC |
| Power Dissipation (PD) at TC=25°C | 110 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| 工作接面溫度 | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.4 °C/W | — |
| 封裝 | TO-220AB (through-hole, 3 leads) | TO-220AB (3-pin + tab) |
| 安裝類型 | Through Hole | Through Hole |
| Technology | HEXFET (advanced process) | HEXFET (Advanced Process) |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | — |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |