IRLZ44NPBF vs IRFZ44NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLZ44NPBF sa pamamagitan ng Infineon at IRFZ44NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLZ44NPBF IRFZ44NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) Max ±16 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (typ 1.5 V) —
Static Drain-to-Source On-Resistance (RDS(on)) 22 mΩ max at VGS=5V, ID=25A —
Total Gate Charge (Qg) 32 nC 42 nC
Power Dissipation (PD) at TC=25°C 110 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C -55C to +175C
Thermal Resistance Junction-to-Case (RθJC) 1.4 °C/W —
Packhaging TO-220AB (through-hole, 3 leads) TO-220AB (3-pin + tab)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (advanced process) HEXFET (Advanced Process)
Logic-Level Gate Drive Yes (fully enhanced at VGS=5V) —
Tindminan RoHS Compliant Compliant
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

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