IRLZ44NPBF vs IRLZ34NPBF Comparison
Detailed side-by-side comparison of IRLZ44NPBF by Infineon and IRLZ34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ44NPBF | IRLZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.65 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25Β°C | 47 A | β |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) Max | Β±16 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΞ© max at VGS=5V, ID=25A | β |
| Total Gate Charge (Qg) | 32 nC | 16.7 nC (typical) |
| Power Dissipation (PD) at TC=25Β°C | 110 W | β |
| Power Dissipation (PD) at TA=25Β°C | 3.8 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RΞΈJC) | 1.4 Β°C/W | β |
| Package | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole, 3 leads + tab) |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (advanced process) | β |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | β |
| RoHS Status | Compliant | Compliant (Pb-free PBF suffix) |
| Manufacturer | β | Infineon (formerly International Rectifier) |
| Part Number Suffix | β | PBF = Lead-free (Pb-free), Tube packaging |
| Transistor Type | β | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc=25 C | β | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | β | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | β | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | β | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | β | 68 W |
| MSL Level | β | Not applicable (through-hole) |