IRLZ44NPBF vs IRLZ34NPBF Perbandingan

Perbandingan bersamaan detil IRLZ44NPBF dari Infineon dan IRLZ34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLZ44NPBF IRLZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) Max ±16 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (typ 1.5 V) —
Static Drain-to-Source On-Resistance (RDS(on)) 22 mΩ max at VGS=5V, ID=25A —
Total Gate Charge (Qg) 32 nC 16.7 nC (typical)
Power Dissipation (PD) at TC=25°C 110 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Suhu Hubung Kerja -55 °C to +175 °C -55 C to +175 C
Thermal Resistance Junction-to-Case (RθJC) 1.4 °C/W —
Paket TO-220AB (through-hole, 3 leads) TO-220AB (through-hole, 3 leads + tab)
Tipe Mounting Through Hole Through Hole
Technology HEXFET (advanced process) —
Logic-Level Gate Drive Yes (fully enhanced at VGS=5V) —
Status RoHS Compliant Compliant (Pb-free PBF suffix)
Manufacturer — Infineon (formerly International Rectifier)
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
Tipe Transistor — N-Channel HEXFET Power MOSFET
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Power Dissipation (PD) at Tc=25 C — 68 W
Level MSL — Not applicable (through-hole)

Spek dan Sumber

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