IRLZ44NPBF vs IRLZ34NPBF 比較
詳細並排比較 IRLZ44NPBF 由 Infineon 與 IRLZ34NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLZ44NPBF | IRLZ34NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) Max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΩ max at VGS=5V, ID=25A | — |
| Total Gate Charge (Qg) | 32 nC | 16.7 nC (typical) |
| Power Dissipation (PD) at TC=25°C | 110 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| 工作接面溫度 | -55 °C to +175 °C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.4 °C/W | — |
| 封裝 | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole, 3 leads + tab) |
| 安裝類型 | Through Hole | Through Hole |
| Technology | HEXFET (advanced process) | — |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | — |
| RoHS 狀態 | Compliant | Compliant (Pb-free PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| 電晶體類型 | — | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| MSL 等級 | — | Not applicable (through-hole) |