IRLZ44NPBF vs IRLZ34NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLZ44NPBF disebabkan oleh Infineon dan IRLZ34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLZ44NPBF IRLZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) Max ±16 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (typ 1.5 V) —
Static Drain-to-Source On-Resistance (RDS(on)) 22 mΩ max at VGS=5V, ID=25A —
Total Gate Charge (Qg) 32 nC 16.7 nC (typical)
Power Dissipation (PD) at TC=25°C 110 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55 C to +175 C
Thermal Resistance Junction-to-Case (RθJC) 1.4 °C/W —
Kemasan TO-220AB (through-hole, 3 leads) TO-220AB (through-hole, 3 leads + tab)
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET (advanced process) —
Logic-Level Gate Drive Yes (fully enhanced at VGS=5V) —
Status RoHS Compliant Compliant (Pb-free PBF suffix)
Manufacturer — Infineon (formerly International Rectifier)
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
Jenis Transistor — N-Channel HEXFET Power MOSFET
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Power Dissipation (PD) at Tc=25 C — 68 W
Aras MSL — Not applicable (through-hole)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga