IRLZ44NPBF vs IRLZ34NPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRLZ44NPBF tarafından Infineon ve IRLZ34NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRLZ44NPBF IRLZ34NPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) Max ±16 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (typ 1.5 V) —
Static Drain-to-Source On-Resistance (RDS(on)) 22 mΩ max at VGS=5V, ID=25A —
Total Gate Charge (Qg) 32 nC 16.7 nC (typical)
Power Dissipation (PD) at TC=25°C 110 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
İşletim Jant Sıcaklığı -55 °C to +175 °C -55 C to +175 C
Thermal Resistance Junction-to-Case (RθJC) 1.4 °C/W —
Paket TO-220AB (through-hole, 3 leads) TO-220AB (through-hole, 3 leads + tab)
Montaj Türü Through Hole Through Hole
Technology HEXFET (advanced process) —
Logic-Level Gate Drive Yes (fully enhanced at VGS=5V) —
RoHS Durumu Compliant Compliant (Pb-free PBF suffix)
Manufacturer — Infineon (formerly International Rectifier)
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
Transistor Türü — N-Channel HEXFET Power MOSFET
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Power Dissipation (PD) at Tc=25 C — 68 W
MSL Seviyesi — Not applicable (through-hole)

Dökümanlar & Kaynaklar

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