IRS2184SPBF vs 2ED2183S06FXUMA1 比較

詳細並排比較 IRS2184SPBF 由 Infineon 與 2ED2183S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2183S06FXUMA1 2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 ✓ 啟用中

規格比較

參數 IRS2184SPBF 2ED2183S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and Low-side referenced outputs, dependent channels High Side, Low Side, Non-Inverting
輸出數量 2 1 (half-bridge: high-side + low-side)
Output Polarity Non-Inverting —
Offset Voltage (High-Side) 600 V maximum —
Peak Source Current 1.9 A typical —
Peak Sink Current 2.3 A typical —
Logic Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility 3.3 V and 5 V CMOS / LSTTL —
Bootstrap Supply (VBS) 10 V to 20 V (UVLO protected) 10 V to 20 V (typ.)
Propagation Delay (typ.) [DATA_NEEDED: propagation delay matched both channels] —
工作溫度範圍 -40C to +125C —
封裝 8-SOIC (SOIC-8) PG-DSO-8-53 (DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] 2
RoHS 狀態 Compliant (PbF suffix indicates lead-free) Compliant
Technology Proprietary HVIC and latch-immune CMOS SOI (Silicon-On-Insulator)
Driver Type — Half-Bridge Gate Driver
Number of Drivers — 1
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
上升時間 — 15 ns
下降時間 — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
工作溫度 — -40 C to +125 C
Terminal Finish — Tin (e3 per JESD-609)

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