ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
MPN: ISA150233C03LMDSXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.65 | $1.65 |
| 10 | $1.42 | $14.20 |
| 100 | $1.05 | $105.00 |
| 500 | $0.86 | $430.00 |
| 1,000 | $0.72 | $720.00 |
| 2,500 | $0.61 | $1,525.00 |
ISA150233C03LMDSXTMA1 Overview
What is a dual N+P MOSFET? It is a single package that integrates one N-channel and one P-channel enhancement-mode MOSFET sharing a drain, source, or independent substrate configuration. Within the broader semiconductor taxonomy it sits as: dual MOSFET -> MOSFET array -> discrete semiconductor -> power transistor. Integrating both polarities lets designers build complementary switching stages - such as push-pull amplifiers, synchronous rectifiers, and reversible motor drivers - with fewer parts and matched switching characteristics, which simplifies PCB layout and improves thermal symmetry.
Key features include Infineon's OptiMOS 3 trench technology for low on-state resistance, low gate charge, and fast switching transitions. The 30 V VDS rating suits point-of-load converters and 12 V bus rails. The PG-DSO-8-920 footprint follows the industry-standard SO-8 power pad outline, enabling drop-in placement on existing layouts. The integrated ESD protection and avalanche-rated body diode further strengthen reliability in motor and inductive-load applications.
Architecturally, OptiMOS 3 uses a charge-balanced trench gate and an optimized cell pitch to achieve low RDS(on) at small silicon area. The N-channel typically reaches the lower milliohm range while the P-channel trades higher resistance for the convenience of a high-side pull-up or reverse-polarity switching. Both halves share a thermal pad that ties heat directly into the PCB copper, allowing the SO-8 package to dissipate up to 2.5 W with adequate copper pours.
Typical applications include robotics motor drives, DC-DC synchronous buck converters, half-bridge and full-bridge driver stages, USB Power Delivery load switches, and battery protection circuits in 1S-3S Li-ion packs. The complementary pair excels wherever a single-rail supply must switch both polarities efficiently.
When designing with this part, observe VGS gate-drive thresholds, keep the gate-loop area minimal to control ringing, and provide sufficient copper under the thermal pad to keep Tj within the SOA. Designers should derate based on case temperature per the datasheet's Diagram 2 rather than ambient temperature alone.
This page synthesizes Infineon datasheet parameters, distributor pricing, drop-in alternatives, and application-specific design notes not consolidated on the manufacturer's product brief.
Drop-in alternatives for ISA150233C03LMDSXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISA150233C03LMDSXTMA1 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), Package, Technology, Operating Temperature Range, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISA150233C03LMDSXTMA
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7341GTRPBF
✅ Drop-In✓ In Stock
$0.76 / Unit
View Datasheet →AUIRF7640S2TR
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IRF7854TRPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →ISA150233C03LMDSXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Configuration | Dual N-channel + P-channel (1 N + 1 P) |
| Drain-Source Voltage (VDS) | 30 V |
| N-channel Continuous Drain Current (Ta) | 7.6 A |
| N-channel Continuous Drain Current (Tc) | 10.2 A |
| P-channel Continuous Drain Current (Ta) | 6.6 A |
| P-channel Continuous Drain Current (Tc) | 8.8 A |
| Total Power Dissipation (Ta) | 1.4 W |
| Total Power Dissipation (Tc) | 2.5 W |
| Package | PG-DSO-8-920 (SO-8 with thermal pad) |
| Mounting Type | Surface Mount |
| Marking Code | 1523C03L |
| Technology | OptiMOS 3 trench MOSFET |
| Channel Type | N-channel + P-channel enhancement mode |
| Operating Temperature Range | -55 C to +150 C (junction) |
| RoHS Status | Compliant |
ISA150233C03LMDSXTMA1 Pin Configuration
| Pin 1 | S1 (Source N-channel) — Source of N-channel MOSFET 1 |
| Pin 2 | G1 (Gate N-channel) — Gate of N-channel MOSFET 1 |
| Pin 3 | S2 (Source P-channel) — Source of P-channel MOSFET 2 |
| Pin 4 | G2 (Gate P-channel) — Gate of P-channel MOSFET 2 |
| Pin 5 | D2 (Drain P-channel) — Drain of P-channel MOSFET 2 |
| Pin 6 | D1 (Drain N-channel) — Drain of N-channel MOSFET 1 |
| Pin 7 | D1 (Drain N-channel) — Drain of N-channel MOSFET 1 (parallel pin) |
| Pin 8 | S1 (Source N-channel) — Source of N-channel MOSFET 1 (parallel pin) |
Safe Operating Area (per channel)
Typical Applications
ISA150233C03LMDSXTMA1 is suitable for 6 applications: Synchronous Buck DC-DC Converter, Half-Bridge Motor Driver, Battery Polarity / Reverse-Protection Switch, USB Power Delivery Load Switch, Audio Amplifier Output Stage, H-Bridge DC Motor / Solenoid Driver.
Synchronous Buck DC-DC Converter
The ISA150233C03LMDSXTMA1 fits synchronous buck converters from 12 V input rails down to 0.8-5 V outputs, where the integrated N-channel serves as the low-side synchronous rectifier and the P-channel can function as a high-side switch in low-duty applications. With a 30 V VDS rating the part provides substantial margin above 12 V buses, and the matched N+P switching characteristics minimize dead-time and reverse-recovery losses. The SO-8 thermal pad dissipates up to 2.5 W at TC, allowing 5-10 A continuous output current in a compact point-of-load footprint. Use the official Infineon datasheet SOA curves and the recommended gate-driver (such as IR2104SPBF) to validate switching loss at the target switching frequency.
Recommended
Half-Bridge Motor Driver
The complementary N+P pair in ISA150233C03LMDSXTMA1 makes it ideal for half-bridge DC motor driver stages, where the N-channel pulls low and the P-channel pulls high. This topology removes the need for a charge-pump high-side N-channel driver in sub-20 V applications, simplifying the gate-drive circuitry to a single low-side signal. With 7.6 A N-channel and 6.6 A P-channel continuous ratings, the part drives small brushed DC motors, fans, and solenoid actuators common in robotics. Pair with the TLE94110ESXUMA1 multi-half-bridge driver IC for multi-axis motor control and add a TVS snubber to clamp inductive kick-back within the 30 V VDS limit.
Recommended
Battery Polarity / Reverse-Protection Switch
The ISA150233C03LMDSXTMA1 enables a low-loss reverse-polarity protection circuit for 1S-3S Li-ion battery packs, where the P-channel MOSFET is placed in the high-side path and conducts during normal operation with negligible body-diode loss. The N-channel can drive a status LED or act as a secondary disconnect path. The 30 V VDS comfortably exceeds the 12.6 V max of a 3S Li-ion pack, and the 6.6 A P-channel rating supports continuous discharge currents typical in portable power banks. The SO-8 footprint keeps the solution compact for handheld designs, and the OptiMOS 3 low gate charge minimizes turn-on delay.
Recommended
USB Power Delivery Load Switch
The ISA150233C03LMDSXTMA1 works as a USB Power Delivery load switch on the VBUS rail, where the P-channel controls the 5 V or 20 V output and the N-channel provides a fast discharge path when the load is disconnected. The 30 V VDS rating handles USB PD 3.1 Extended Power Range up to 28 V, and the complementary topology simplifies the gate-drive logic for the load switch controller. With 6.6 A continuous P-channel current, the part supports 100 W (20 V / 5 A) PD profiles in a single SO-8 device, replacing two discrete MOSFETs and shrinking PCB area in compact travel adapters.
Recommended
Audio Amplifier Output Stage
The ISA150233C03LMDSXTMA1's complementary N+P topology suits Class-AB audio amplifier output stages, where the N-channel sinks current during the negative half-cycle and the P-channel sources current during the positive half-cycle. OptiMOS 3's low gate charge and matched switching behavior reduce crossover distortion compared with discrete N+N output pairs. The 30 V VDS supports headphone amplifiers up to +/-12 V rails, and the 7.6 A peak current drives low-impedance 32-ohm headphones cleanly. Combine with a low-noise op-amp front end such as the TLE42744EV50XUMA1 LDO to power the input stage for best THD performance.
Recommended
H-Bridge DC Motor / Solenoid Driver
The ISA150233C03LMDSXTMA1 can form one leg of an H-bridge driver by placing two dual N+P MOSFETs in a push-pull configuration, enabling bidirectional control of brushed DC motors, bi-stable solenoids, and latching relays. Each Infineon device supplies one N+P complementary pair per half-bridge leg, halving the component count versus all-N-channel designs that need charge pumps. With 7.6 A N-channel continuous current per leg, the part drives 12 V brushed motors up to ~70 W mechanical output. Pair with the TLE9180D32QKXUMA1 gate-driver IC for automotive-grade H-bridge systems requiring functional safety diagnostics.
Recommended
Recommended Products Summary
Engineering reference data for ISA150233C03LMDSXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISA150233C03LMDSXTMA | IRF7341GTRPBF | AUIRF7640S2TR | IRF7854TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8-920 (SO-8) | PG-DSO-8-920 (SO-8) | SO-8 | SO-8 | SO-8 |
| Configuration | Dual N+P channel | Dual N+P channel | Dual N+N channel | Single N-channel | Single N-channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 55 V | 60 V | 80 V |
| Total Power Dissipation (TC) | 2.5 W | 2.5 W | 2.0 W | 2.5 W | 2.5 W |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | HEXFET | HEXFET | HEXFET |
| Automotive Grade (AEC-Q101) | No (industrial) | No | No | Yes | No |
Key Differentiators
- Integrated N+P complementary pair in one SO-8 (vs IRF7341GTRPBF)
- OptiMOS 3 trench technology vs planar HEXFET (vs AUIRF7640S2TR)
- Right-voltage class for 12 V bus systems (vs IRF7854TRPBF)
Design Notes
Estimated: at TA=25 C with 1 oz copper 1 square inch SO-8 thermal pad, the part dissipates about 1.4 W at TA and up to 2.5 W when TC is held at 25 C. For applications above 1.5 W continuous, increase the copper pour to at least 2-3 square inches on top and bottom layers tied with thermal vias directly under the exposed pad. Use the datasheet's Diagram 2 (thermal derating curve) for TC above 25 C; do not rely on ambient-only derating, which underestimates junction temperature in forced-air or enclosed environments.
Place gate-drive resistors (typically 10-100 ohm) within 5 mm of each gate pin to control the gate-loop area and suppress ringing. Keep the high-current drain-source loop area minimal and route it directly above the thermal pad. For the dual MOSFET, separate the N-channel and P-channel gate traces by at least 1 mm to avoid capacitive cross-coupling that can cause shoot-through in half-bridge topologies. Add a small RC snubber across each drain-source pair when driving inductive loads.
Do not assume the SO-8 footprint guarantees pin-compatible dual MOSFETs across vendors - dual MOSFET pin assignments (which channel sits on which pin) vary significantly between manufacturers. Always verify the Infineon pinout (S1-G1-S2-G2-D2-D1-D1-S1) against the alternative's datasheet before substituting, even when the package outline matches. Also confirm the gate-drive logic: N-channel requires positive VGS to turn on, while the P-channel in this part requires negative VGS (relative to its source) to turn on.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade (not AEC-Q100/Q101 qualified); for automotive-grade equivalents use AUIRF7640S2TR or IRF7341GTRPBF series.
