ISC011N04NM7VATMA1 vs IAUCN08S7L013ATMA1 Perbandingan
Perbandingan bersamaan detil ISC011N04NM7VATMA1 dari Infineon dan IAUCN08S7L013ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC011N04NM7VATMA1 | IAUCN08S7L013ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | 219 W |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | — |
| Paket | PG-TDSON-8 (source-down) | PG-TDSON-8-53 (TDSON-8 FL) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | -55 °C to +175 °C |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| Level MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Channel Type | — | N-Channel |
| Maximum On-Resistance (RDS(on) max) | — | 1.26 mΩ |
| Arus Alir Berlanjut (TC=25°C) | — | [DATA_NEEDED: continuous drain current at TC=25C] |
| Continuous Drain Current (TJ) | — | 293 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage range] |
| Gate Drive Voltage (typical) | — | 10 V |
| Qualification | — | AEC-Q101 (automotive) |
| Status RoHS | — | Compliant |
| Packaging | — | Tape & Reel (suffix ATMA1) |