ISC011N04NM7VATMA1 vs IAUCN08S7L024ATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IAUCN08S7L024ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N04NM7VATMA1 | IAUCN08S7L024ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS™ 7 N-channel trench MOSFET |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Operating Temperature Range | -55 °C to +175 °C (TJ) | -55C to +175C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) | — | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | — | 150 A |
| On-Resistance RDS(on) max | — | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 148 W (Tc) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Status | — | Compliant |