ISC045N03L5SATMA1 vs IAUCN08S7L013ATMA1 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IAUCN08S7L013ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L013ATMA1

IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 βœ“ Active

Specification Comparison

Parameter ISC045N03L5SATMA1 IAUCN08S7L013ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $1.96
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 / Trench β€”
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TC=25Β°C 63 A β€”
On-Resistance RDS(on) max @ VGS=10V 4.5 mΞ© β€”
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 Β΅A β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) 13 nC @ VGS=10 V β€”
Input Capacitance (Ciss) 870 pF @ VDS=15 V β€”
Power Dissipation (PD) at TA=25Β°C 2.5 W β€”
Power Dissipation (PD) at TC=25Β°C 30 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-6) PG-TDSON-8-53 (TDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C -55 Β°C to +175 Β°C
RoHS Status Compliant Compliant
Product Family β€” OptiMOS 7
Channel Type β€” N-Channel
Maximum On-Resistance (RDS(on) max) β€” 1.26 mΞ©
Continuous Drain Current (TC = 25 Β°C) β€” [DATA_NEEDED: continuous drain current at TC=25C]
Continuous Drain Current (TJ) β€” 293 A
Power Dissipation (TC) β€” 219 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage range]
Gate Drive Voltage (typical) β€” 10 V
MSL Level β€” [DATA_NEEDED: MSL rating]
Qualification β€” AEC-Q101 (automotive)
Packaging β€” Tape & Reel (suffix ATMA1)

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