ISC045N03L5SATMA1 vs IAUCN08S7L013ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC045N03L5SATMA1 disebabkan oleh Infineon dan IAUCN08S7L013ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC045N03L5SATMA1 IAUCN08S7L013ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 / Trench —
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Kemasan SuperSO8 5x6 (PG-TDSON-8-6) PG-TDSON-8-53 (TDSON-8 FL)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C -55 °C to +175 °C
Status RoHS Compliant Compliant
Product Family — OptiMOS 7
Channel Type — N-Channel
Maximum On-Resistance (RDS(on) max) — 1.26 mΩ
Arus Kumpal Tetap (TC=25°C) — [DATA_NEEDED: continuous drain current at TC=25C]
Continuous Drain Current (TJ) — 293 A
Power Dissipation (TC) — 219 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage range]
Gate Drive Voltage (typical) — 10 V
Aras MSL — [DATA_NEEDED: MSL rating]
Qualification — AEC-Q101 (automotive)
Packaging — Tape & Reel (suffix ATMA1)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga