ISC045N03L5SATMA1 vs IAUCN08S7L013ATMA1 Perbandingan
Perbandingan bersamaan detil ISC045N03L5SATMA1 dari Infineon dan IAUCN08S7L013ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC045N03L5SATMA1 | IAUCN08S7L013ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | — |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TDSON-8-53 (TDSON-8 FL) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55 °C to +175 °C |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Maximum On-Resistance (RDS(on) max) | — | 1.26 mΩ |
| Arus Alir Berlanjut (TC=25°C) | — | [DATA_NEEDED: continuous drain current at TC=25C] |
| Continuous Drain Current (TJ) | — | 293 A |
| Power Dissipation (TC) | — | 219 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage range] |
| Gate Drive Voltage (typical) | — | 10 V |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Qualification | — | AEC-Q101 (automotive) |
| Packaging | — | Tape & Reel (suffix ATMA1) |