ISC045N03L5SATMA1 vs IPD70N10S3L12ATMA2 Perbandingan

Perbandingan bersamaan detil ISC045N03L5SATMA1 dari Infineon dan IPD70N10S3L12ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC045N03L5SATMA1 IPD70N10S3L12ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 IPD70N10S3L12ATMA2
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 5 / Trench OptiMOS-T (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Paket SuperSO8 5x6 (PG-TDSON-8-6) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C —
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at TC — 70 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
On-State Resistance R_DS(on) typ @ VGS=10V — 11.5 mOhm
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD at TC — 125 W
Suhu Hubung Kerja — -55 C to +175 C
Level MSL — [DATA_NEEDED: MSL level]

Spek dan Sumber

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