ISC078N12NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC078N12NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC078N12NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $3.62
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 β€”
Technology N-Channel Trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 120 V β€”
Continuous Drain Current (ID) at Tc 85 A β€”
Continuous Drain Current (ID) at Ta 13.2 A β€”
On-Resistance RDS(on) typ at VGS=10V 7.8 mΞ© β€”
Power Dissipation at Tc 125 W 214 W
Power Dissipation at Ta 3 W 3 W
Package SuperSO8 (TDSON-8) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +175C (junction)
Pin Count 8 β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] β€”
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Lead-Free Yes β€”
Drain-Source Voltage (Vds) β€” 120 V
Continuous Drain Current (Id) at Ta=25C β€” 19.2 A
Pulsed Drain Current (Idm) at Tc β€” 163 A
On-Resistance Rds(on) typ at Vgs=10V β€” 3.7 mOhm
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg total]
Avalanche Energy Rated β€” Yes (single-pulse)

Datasheets & Resources

Browse All Products Create BOM Request Quote