ISC078N12NM6ATMA1 vs ISC037N12NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC078N12NM6ATMA1 sa pamamagitan ng Infineon at ISC037N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC078N12NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 —
Technology N-Channel Trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 85 A —
Continuous Drain Current (ID) at Ta 13.2 A —
On-Resistance RDS(on) typ at VGS=10V 7.8 mΩ —
Power Dissipation at Tc 125 W 214 W
Power Dissipation at Ta 3 W 3 W
Packhaging SuperSO8 (TDSON-8) PG-TDSON-8 FL (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C (junction)
Bilang ng Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (per JEDEC J-STD-020)
Lead-Free Yes —
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Avalanche Energy Rated — Yes (single-pulse)

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