ISC151N08NM6ATMA1 vs IAUCN08S7L018ATMA1 Comparison
Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IAUCN08S7L018ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC151N08NM6ATMA1 | IAUCN08S7L018ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Continuous Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | N-Channel Trench MOSFET |
| Package | PG-TDSON-8 FL | PG-TDSON-8-43 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Operating Temperature | -55 °C to +175 °C | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 210 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: ID at Tc] |
| Maximum RDS(on) at VGS=10 V | — | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | — | 169 W |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Qualification | — | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | — | 10 V |
| MSL Level | — | [DATA_NEEDED: MSL level] |