ISC151N08NM6ATMA1 vs IAUCN08S7L018ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC151N08NM6ATMA1 sa pamamagitan ng Infineon at IAUCN08S7L018ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L018ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC151N08NM6ATMA1 | IAUCN08S7L018ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Patuloy na Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | N-Channel Trench MOSFET |
| Packhaging | PG-TDSON-8 FL | PG-TDSON-8-43 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | -55 °C to +175 °C | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 210 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: ID at Tc] |
| Maximum RDS(on) at VGS=10 V | — | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | — | 169 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Qualification | — | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | — | 10 V |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |