ISC151N08NM6ATMA1 vs IAUCN08S7L018ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC151N08NM6ATMA1 disebabkan oleh Infineon dan IAUCN08S7L018ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC151N08NM6ATMA1 | IAUCN08S7L018ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Kumpal Tetap (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | N-Channel Trench MOSFET |
| Kemasan | PG-TDSON-8 FL | PG-TDSON-8-43 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Operasi | -55 °C to +175 °C | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 210 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: ID at Tc] |
| Maximum RDS(on) at VGS=10 V | — | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | — | 169 W |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Qualification | — | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | — | 10 V |
| Aras MSL | — | [DATA_NEEDED: MSL level] |