ISC151N08NM6ATMA1 vs IPB068N20NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IPB068N20NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB068N20NM6ATMA1 - 200V 68mOhm N-Ch OptiMOS 6 MOSFET | Infineon
IPB068N20NM6ATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC151N08NM6ATMA1 | IPB068N20NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 200 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Continuous Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | 68 milliohm |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 charge-compensation trench |
| Package | PG-TDSON-8 FL | PG-TO263-3-2 (D2PAK, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Operating Temperature | -55 °C to +175 °C | — |
| RoHS Status | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA | — | 15.4 A |
| Continuous Drain Current (ID) at TC | — | 134 A |
| Power Dissipation (PD) at TA | — | 3.8 W |
| Power Dissipation (PD) at TC | — | 300 W |
| RDS(on) Improvement vs Prior Generation | — | 42% lower |
| Pin Count | — | 3 (2 + tab) |
| Tape and Reel Packaging | — | Yes (ATMA1 suffix = T&R) |