ISC151N08NM6ATMA1 vs IQD009N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IQD009N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC151N08NM6ATMA1 | IQD009N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Continuous Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 5 (trench) |
| Package | PG-TDSON-8 FL | PG-TSON-8-9 (PQFN 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Operating Temperature | -55 °C to +175 °C | -55 °C to +175 °C |
| RoHS Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 42 A |
| Continuous Drain Current (Tc) | — | 445 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| RDS(on) Maximum | — | 0.9 mΩ @ VGS = 10 V |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| MSL Level | — | MSL 1 (per JEDEC J-STD-020) |