ISC151N08NM6ATMA1 vs IQD009N06NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC151N08NM6ATMA1 sa pamamagitan ng Infineon at IQD009N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISC151N08NM6ATMA1 | IQD009N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Patuloy na Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 5 (trench) |
| Packhaging | PG-TDSON-8 FL | PG-TSON-8-9 (PQFN 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | -55 °C to +175 °C | -55 °C to +175 °C |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 42 A |
| Continuous Drain Current (Tc) | — | 445 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| RDS(on) Maximum | — | 0.9 mΩ @ VGS = 10 V |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Level ng MSL | — | MSL 1 (per JEDEC J-STD-020) |