ISC151N08NM6ATMA1 vs IQD009N06NM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC151N08NM6ATMA1 dari Infineon dan IQD009N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC151N08NM6ATMA1 | IQD009N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Alir Berlanjut (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 5 (trench) |
| Paket | PG-TDSON-8 FL | PG-TSON-8-9 (PQFN 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Kerja | -55 °C to +175 °C | -55 °C to +175 °C |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 42 A |
| Continuous Drain Current (Tc) | — | 445 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| RDS(on) Maximum | — | 0.9 mΩ @ VGS = 10 V |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Level MSL | — | MSL 1 (per JEDEC J-STD-020) |