ISC151N08NM6ATMA1 vs IQD063N15NM5SCATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IQD063N15NM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Active
Infineon
IQD063N15NM5SCATMA1

IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon

IQD063N15NM5SCATMA1 ✓ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 IQD063N15NM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $2.35
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (TA=25°C) 9.2 A
Continuous Drain Current (TC=25°C) 37 A
Power Dissipation (TA) 3 W
Power Dissipation (TC) 48 W
On-Resistance RDS(on) max 15.1 mΩ
Gate Threshold Voltage VGS(th) typ 3.5 V
Technology OptiMOS 6
Package PG-TDSON-8 FL PG-WHSON-8-U02 (WHSON-8 with exposed pad)
Mounting Type Surface Mount Surface Mount
Number of Pins 8
Channel Mode Enhancement
Operating Temperature -55 °C to +175 °C
RoHS Status Compliant Compliant
Manufacturer Infineon Technologies
Series OptiMOS™ 5
FET Type N-Channel
Continuous Drain Current (ID) at TC=25°C 151 A
Continuous Drain Current (ID) at TA=25°C 14.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
On-Resistance RDS(on) at VGS=10V 5.1 mΩ
On-Resistance RDS(on) at VGS=4.5V 6.32 mΩ (typ)
Gate-Source Threshold Voltage (VGS(th)) 3.8 V (max)
Total Gate Charge (QG) at VGS=10V 48 nC
Input Capacitance (Ciss) 3.6 nF
Output Capacitance (Coss) 900 pF
Reverse Transfer Capacitance (Crss) 21 pF
Maximum Power Dissition (PD) at TC=25°C 333 W
Maximum Power Dissition (PD) at TA=25°C 3 W
Operating Temperature Range -55°C to +175°C

Datasheets & Resources

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