ISC151N08NM6ATMA1 vs IQD063N15NM5SCATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IQD063N15NM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 IQD063N15NM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (TA=25°C) 9.2 A —
Continuous Drain Current (TC=25°C) 37 A —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 48 W —
On-Resistance RDS(on) max 15.1 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Technology OptiMOS 6 —
Package PG-TDSON-8 FL PG-WHSON-8-U02 (WHSON-8 with exposed pad)
Mounting Type Surface Mount Surface Mount
Number of Pins 8 —
Channel Mode Enhancement —
Operating Temperature -55 °C to +175 °C —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS™ 5
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 151 A
Continuous Drain Current (ID) at TA=25°C — 14.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) at VGS=10V — 5.1 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.32 mΩ (typ)
Gate-Source Threshold Voltage (VGS(th)) — 3.8 V (max)
Total Gate Charge (QG) at VGS=10V — 48 nC
Input Capacitance (Ciss) — 3.6 nF
Output Capacitance (Coss) — 900 pF
Reverse Transfer Capacitance (Crss) — 21 pF
Maximum Power Dissition (PD) at TC=25°C — 333 W
Maximum Power Dissition (PD) at TA=25°C — 3 W
Operating Temperature Range — -55°C to +175°C

Datasheets & Resources

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