ISC151N08NM6ATMA1 vs IQD063N15NM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC151N08NM6ATMA1 sa pamamagitan ng Infineon at IQD063N15NM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC151N08NM6ATMA1 | IQD063N15NM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Patuloy na Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | — |
| Packhaging | PG-TDSON-8 FL | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | -55 °C to +175 °C | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 151 A |
| Continuous Drain Current (ID) at TA=25°C | — | 14.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) at VGS=10V | — | 5.1 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.32 mΩ (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | — | 48 nC |
| Input Capacitance (Ciss) | — | 3.6 nF |
| Output Capacitance (Coss) | — | 900 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |
| Maximum Power Dissition (PD) at TC=25°C | — | 333 W |
| Maximum Power Dissition (PD) at TA=25°C | — | 3 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C |