ISC151N08NM6ATMA1 vs IQD063N15NM5SCATMA1 Perbandingan

Perbandingan bersamaan detil ISC151N08NM6ATMA1 dari Infineon dan IQD063N15NM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC151N08NM6ATMA1 IQD063N15NM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (TA=25°C) 9.2 A —
Arus Alir Berlanjut (TC=25°C) 37 A —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 48 W —
On-Resistance RDS(on) max 15.1 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Technology OptiMOS 6 —
Paket PG-TDSON-8 FL PG-WHSON-8-U02 (WHSON-8 with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Channel Mode Enhancement —
Suhu Kerja -55 °C to +175 °C —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS™ 5
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 151 A
Continuous Drain Current (ID) at TA=25°C — 14.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) at VGS=10V — 5.1 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.32 mΩ (typ)
Gate-Source Threshold Voltage (VGS(th)) — 3.8 V (max)
Total Gate Charge (QG) at VGS=10V — 48 nC
Input Capacitance (Ciss) — 3.6 nF
Output Capacitance (Coss) — 900 pF
Reverse Transfer Capacitance (Crss) — 21 pF
Maximum Power Dissition (PD) at TC=25°C — 333 W
Maximum Power Dissition (PD) at TA=25°C — 3 W
Rentang Suhu Kerja — -55°C to +175°C

Spek dan Sumber

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