ISC151N08NM6ATMA1 vs IQD063N15NM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC151N08NM6ATMA1 disebabkan oleh Infineon dan IQD063N15NM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC151N08NM6ATMA1 IQD063N15NM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (TA=25°C) 9.2 A —
Arus Kumpal Tetap (TC=25°C) 37 A —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 48 W —
On-Resistance RDS(on) max 15.1 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Technology OptiMOS 6 —
Kemasan PG-TDSON-8 FL PG-WHSON-8-U02 (WHSON-8 with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 8 —
Channel Mode Enhancement —
Suhu Operasi -55 °C to +175 °C —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS™ 5
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 151 A
Continuous Drain Current (ID) at TA=25°C — 14.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) at VGS=10V — 5.1 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.32 mΩ (typ)
Gate-Source Threshold Voltage (VGS(th)) — 3.8 V (max)
Total Gate Charge (QG) at VGS=10V — 48 nC
Input Capacitance (Ciss) — 3.6 nF
Output Capacitance (Coss) — 900 pF
Reverse Transfer Capacitance (Crss) — 21 pF
Maximum Power Dissition (PD) at TC=25°C — 333 W
Maximum Power Dissition (PD) at TA=25°C — 3 W
Gambaran Suhu Operasi — -55°C to +175°C

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga