ISCH57N04NM7VSCATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of ISCH57N04NM7VSCATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISCH57N04NM7VSCATMA1
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | ISCH57N04NM7VSCATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.82 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | OptiMOS 7 (trench) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Ta | 52 A | β |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | β |
| Pulsed Drain Current (IDM) at Tc | 443 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 214 W | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55 C to +175 C (typical MOSFET junction range) | β |
| Package | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | Dual N-Channel (independent MOSFETs) |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |