ISCH57N04NM7VSCATMA1 vs BSC076N04NDATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISCH57N04NM7VSCATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISCH57N04NM7VSCATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | OptiMOS 7 (trench) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (typical MOSFET junction range) | — |
| Packhaging | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | Dual N-Channel (independent MOSFETs) |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| Tindminan RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packhaging / Kaso | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |