K4A4G085WG-BCWE vs K4A4G085WF-BITD Comparison
Detailed side-by-side comparison of K4A4G085WG-BCWE by Samsung Electronics and K4A4G085WF-BITD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WG-BCWE | K4A4G085WF-BITD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.68 | $2.65 |
| Memory Type | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Memory Size | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Data Rate | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Package | FBGA-78 (BCW) | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Interface | Parallel (DDR4) | Parallel, DDR4 SSTL12 |
| Burst Length | BL8 | BL8 |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| RoHS Status | Compliant | — |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| Organization | — | 512M x 8 |
| Speed | — | 2666 Mbps (MT/s) |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| CAS Latency | — | CL19 (typical at 2666 Mbps) |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |