K4A4G085WG-BCWE vs K4A4G085WF-BITD 对比
详细并排对比 K4A4G085WG-BCWE 出自 Samsung Electronics 和 K4A4G085WF-BITD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WG-BCWE | K4A4G085WF-BITD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.68 | $2.65 |
| 存储器类型 | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| 存储容量 | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| 数据速率 | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| 封装 | FBGA-78 (BCW) | 78-ball FBGA (78FBGA) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 接口 | Parallel (DDR4) | Parallel, DDR4 SSTL12 |
| Burst Length | BL8 | BL8 |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| RoHS 状态 | Compliant | — |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| 存储组织 | — | 512M x 8 |
| Speed | — | 2666 Mbps (MT/s) |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| CAS 延迟 | — | CL19 (typical at 2666 Mbps) |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |