K4A4G165WD-BCTD vs H5AN4G6NBJR-UHC Comparison
Detailed side-by-side comparison of K4A4G165WD-BCTD by Samsung Electronics and H5AN4G6NBJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WD-BCTD | H5AN4G6NBJR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $19.00 | $8.09 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Core Supply (VPP) | 2.5 V | — |
| Interface | SSTL-12 | — |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Package | 96-ball FBGA | FBGA-96 (PBGA-96) |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| Operating Temperature | 0C to +85C (commercial) | -40C to +95C |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes (external RZQ resistor) | Yes |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Memory Size | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Technology | — | CMOS |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |